BSO330N02K g opti mos ? 2 power-transistor features ? for fast switching converters and sync. rectification ? qualified according to jedec 1) for target applications ? dual n-channel ? excellent gate charge x r ds(on) product (fom) ? low on-resistance r ds(on) ? avalanche rated ? pb-free plating; rohs compliant maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit 10 secs steady state continuous drain current i d v gs =4.5v, t c =25 c 2) 6.5 5.4 a v gs =4.5v, t c =70 c 2) 5.2 4.3 v gs =2.5v, t c =25 c 2) 5.1 4.2 a v gs =2.5v, t c =70 c 2) 4 3.3 pulsed drain current i d,pulse t c =25 c 3) avalanche energy, single pulse e as i d =6.5 a, r gs =25 ? mj reverse diode d v /d t d v /d t i d =6.5 a, v ds =20 v, d i /d t =200 a/s, t j,max =150 c kv/s gate source voltage v gs v power dissipation p tot t a =25 c 2) 2.0 1.4 w t a =25 c 1) operating and storage temperature t j , t stg c esd class iec climatic category; din iec 68-1 ? super logic level 2.5v rated; n-channel value 55/150/56 -55 ... 150 12 6 19 26 2.5 0 (0v to 250v) pg-dso-8 type package marking BSO330N02K pg-dso-8 330n2k v ds 20 v r ds(on),max v gs =4.5 v 30 m ? v gs =2.5 v 50 i d 6.5 a product summary rev.1.01 page 1 2008-02-05
BSO330N02K g thermal characteristics thermal resistance, junction - soldering point r thjs - - 50 k/w thermal resistance, junction - ambient r thja minimal footprint, t p 10 s - - 110 minimal footprint, steady state - - 150 6 cm 2 cooling area 2) , t p 10 s --63 6 cm 2 cooling area 2) , steady state --90 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =1 ma 20 - - v gate threshold voltage v gs(th) v ds = v gs , i d =20 a 0.7 0.95 1.2 zero gate voltage drain current i dss v ds =20 v, v gs =0 v, t j =25 c --1a v ds =20 v, v gs =0 v, t j =125 c - - 100 gate-source leakage current i gss v gs =12 v, v ds =0 v - - 100 na drain-source on-state resistance r ds(on) v gs =2.5 v, i d =5.1 a -3850 m ? v gs =4.5 v, i d =6.5 a -2430 gate resistance r g - 1.3 - ? transconductance g fs | v ds |>2| i d | r ds(on)max , i d =6.5 a 10 20 - s 2) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. 1) j-std20 and jesd22 rev.1.01 page 2 2008-02-05
BSO330N02K g parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 550 730 pf output capacitance c oss - 190 250 reverse transfer capacitance c rss -2639 turn-on delay time t d(on) - 7.4 - ns rise time t r - 16.8 - turn-off delay time t d(off) - 13.4 - fall time t f - 2.8 - gate char g e characteristics 4) gate to source charge q gs - 1.2 1.6 nc gate charge at threshold q g(th) - 0.5 0.7 gate to drain charge q gd - 0.7 1.1 switching charge q sw - 1.4 2 gate charge total q g - 3.7 4.9 gate plateau voltage v plateau - 2.2 - v gate charge total, sync. fet q g(sync) v ds =0.1 v, v gs =0 to 4.5 v - 3.4 4.5 nc output charge q oss v dd =10 v, v gs =0 v - 2.6 3.4 reverse diode diode continuous forward current i s - - 1.5 a diode pulse current i s,pulse --26 diode forward voltage v sd v gs =0 v, i f =6.5 a, t j =25 c - 0.88 1.2 v reverse recovery time t rr v r =10 v, i f =6.5 a, d i f /d t =100 a/s -14-ns reverse recovery charge q rr v r =10 v, i f =6.5 a, d i f /d t =100 a/s - 4.8 - nc 4) see figure 16 for gate charge parameter definition t c =25 c values v gs =0 v, v ds =10 v, f =1 mhz v dd =10 v, v gs =4.5 v, i d =6.5 a, r g =1.6 ? v dd =10 v, i d =6.5 a, v gs =0 to 4.5 v rev.1.01 page 3 2008-02-05
BSO330N02K g 1 power dissipation 2 drain current p tot =f( t a ); t p 10 s i d =f( t a ); v gs 4.5 v; t p 10 s 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t a =25 c 1) ; d =0 z thja =f( t p ) 2) parameter: t p parameter: d = t p / t single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 3 10 2 10 1 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 2 10 1 10 0 10 -1 t p [s] z thja [k/w] 0 0.5 1 1.5 2 2.5 0 40 80 120 160 t a [c] p tot [w] 0 1 2 3 4 5 6 7 0 40 80 120 160 t a [c] i d [a] 1 s 10 s 100 s 1 ms 10 ms 100 ms dc 10 2 10 1 10 0 10 -1 10 2 10 1 10 0 10 -1 10 -2 v ds [v] i d [a] rev.1.01 page 4 2008-02-05
BSO330N02K g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j 2 v 2.2 v 2.5 v 3 v 3.5 v 4 v 4.5 v 0 10 20 30 40 50 60 048121620 i d [a] r ds(on) [m ? ] 25 c 150 c 0 4 8 12 16 20 0123 v gs [v] i d [a] 0 10 20 30 048121620 i d [a] g fs [s] 1.6 v 1.8 v 2 v 2.2 v 2.4 v 2.5 v 3 v 4 v 0 10 20 30 0123 v ds [v] i d [a] rev.1.01 page 5 2008-02-05
BSO330N02K g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =6.5 a; v gs =4.5 v v gs(th) =f( t j ); v gs = v ds 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ 98% 0 10 20 30 40 50 -60 -20 20 60 100 140 t j [c] r ds(on) [m ? ] ciss coss crss 10 3 10 2 10 1 0 5 10 15 20 v ds [v] c [pf] 25 c 150 c 150 c, 98% 25 c, 98% 10 2 10 1 10 0 10 -1 0 0.5 1 1.5 2 v sd [v] i f [a] 20 a 200 a 0 0.4 0.8 1.2 1.6 -60 -20 20 60 100 140 t j [c] v gs(th) [v] rev.1.01 page 6 2008-02-05
BSO330N02K g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 ? v gs =f( q gate ); i d =6.5 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =1 ma 16 18 20 22 24 -60 -20 20 60 100 140 t j [c] v br(dss) [v] v gs q gate v gs(th) q g(th) q gs q gd q sw q g 25 c 100 c 125 c 10 3 10 2 10 1 10 0 10 1 10 0 10 -1 t av [s] i av [a] 4 v 10 v 16 v 0 1 2 3 4 5 012345 q gate [nc] v gs [v] rev.1.01 page 7 2008-02-05
BSO330N02K g package outline pg-tdson-8 pg-dso-8: outline rev.1.01 page 8 2008-02-05
BSO330N02K g published by infineon technologies ag 81726 munich, germany ? 2007 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be reg arded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the appli cation of the device, infineon technologies hereby disclaims any and all warranties a nd liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and condi tions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon t echnologies office. infineon technologies components may be used in life-support de vices or systems only with the express written approval of infineon technologies, if a fai lure of such components can reasonably be expected to cause the failure of that life-suppor t device or system or to affect the safety or effectiveness of that device or system. life supp ort devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to as sume that the health of the user or other persons may be endangered. rev.1.01 page 9 2008-02-05
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